CHIPS R&D Custom Diffractometry and Fourier Ptychography Endstation

Statement of Work Title: CHIPS R&D Custom Diffractometry and Fourier Ptychography Endstation Lab: PML, NDCD 683.12   BACKGROUND INFORMATION  The Nanoscale Device Characterization Division (NDCD) develops and advances the measurement and knowledge infrastructure to characterize nano- and atom-scale engineered materials and solid-state devices for innovation in information processing, sensing, and future quantum technologies. The NDCD’s technical activities span atom scale devices, nanoscale spectroscopy, advanced electronics, nanoscale processes and measurements, and alternative computing. This acquisition will allow the NDCD to expand its measurement capabilities using extreme-ultraviolet (EUV) diffractometry and Fourier ptychography. The problem being solved by this EUV metrology technique is the non-destructive three-dimensional measurement of nanoscale periodic, non-periodic features in support of the American semiconductor industry. To meet mission requirements, the NDCD needs to acquire a customized diffractometry end station, which will be a new experimental apparatus that will harness short wavelength EUV light for the non-destructive three-dimensional measurement of the smallest features of computer chips, their transistors. This procurement supports the CHIPS R&D Metrology Program's Grand Challenge 2 to advance metrology for future microelectronics manufacturing and project 2.07, “EUV Scatterometry.” The application of the required end station is the accurate quantitative reconstruction of dimensional structure of periodic and other patterned features from the reflective diffraction off a sample under test using EUV light, which will only propagate in a vacuum.   PURPOSE The NDCD is developing capabilities for performing non-destructive optical three-dimensional measurements of the sizes of smallest features in a computer chips (its transistors) for industrial semiconductor manufacturing process control. We are using extreme-ultraviolet (EUV) wavelengths, 10x shorter than those used by the industry today, and current optical approaches using visible and UV wavelengths cannot adequately measure future semiconductor transistors. Our CHIPS project requires EUV-capable instrumentation, with the primary constraint that the apparatus must work in a vacuum, as air absorbs these wavelengths. This procurement is for a required custom diffractometry and Fourier ptychography endstation for our EUV HHG source, which will demonstrate the feasibility of EUV diffraction-based three-dimensional metrologies to the US semiconductor industry.   MINIMUM REQUIREMENTS The Contractor shall provide a system that meets all technical specifications identified below. All items must be new. Used or remanufactured equipment will not be considered for award. Experimental, prototype, or custom items will not be considered. The use of “gray market” components are not acceptable. All line items shall be shipped in the original manufacturer’s packaging and include all original documentation and software, when applicable. Line Item 0001: Description: Custom Diffractometry and Fourier Ptychography Endstation Quantity: 1 Technical Specifications The “Custom diffractometry and Fourier ptychography endstation shall be comprised of: A custom vacuum chamber body - Laterally square shape, 40”x40” (interior), Height 24” (interior). - Capable of high vacuum (HV), defined herein as capable of attaining a 10-6 Torr base pressure. - Materials: Stainless steel (SS) or Aluminum (Al) for body, Al for removable top side. - Viewports: Top side Al: (1) ISO-250 bulkhead Chamber body: (4) KF-40 bulkheads (2) ISO-100 bulkhead (2) ISO-160 bulkheads (8) ISO-200 bulkheads Bulkheads can be converted to ConFlat ports or ISO-K by mutual consent. - Base breadboard with 1” spaced tab holes made of 304 SS. - All gaskets, blank flanges, and hardware (bolts, washers, nuts, etc.) required for the custom vacuum chamber to hold high vacuum. Sample stage with wafer chuck - Electrostatic chuck for holding 300 mm Si wafer. - Stage with 4 degrees of freedom in X-Y-Z-R. X-Y: resolution of sub-μm, travel of ±3” Z: resolution of about 15 nm, travel of several mm R: resolution of sub min, travel 360 deg - Vacuum-compatible for 10-6 Torr. - Vacuum feedthrough(s) (ISO-160 or ISO-200) to connect sample stage to control electronics. - Control electronics to allow a NIST-provided computer to control these stages. - All cables (vacuum- and air-side) included. - Basic software and drivers to enable control of this stage (python, C++, etc.) Optical/Camera Stage - Vertical Arc Arm: Arc shape to hold the camera holding arm. The arm radius is at least 10” and no larger than 22” by mutual consent. The arm can hold the camera holding arm, which is movable along the arc line (from bottom to top: 10° – 70°) and motorized. The arc arm diameter must be at least half of the wafer stage size and its travel length. All parts must be HV compatible. - Camera holding arm: attached to the Vertical Arc Arm and is comprised of vacuum compatible motorized stages with x,y,z, and two tilts. The specification is x-y-z axes with travel of about 1”, resolution of 1 μm and two tilts with travel of about 5 degrees, resolution of 1 min. - A holder for camera is mounted to the camera stage. - A holder for 1” optics element in front of the camera is attached to the camera holder. Element will be centered onto the camera sensor). - Vacuum feedthrough (ISO-160 or ISO-200) to connect stages to their control electronics. - Control electronics to allow a NIST-provided computer to control these stages. - All cables (vacuum- and air-side) included. -Software to enable control of this stage (python, C++, etc.). Full in-vacuum EUV camera - High vacuum compatible. - 2k x 2k pixel resolution or better with a depth of 16-bit or more. - Sensor diagonal is 1” or larger. - QE ~ 85% – 55% or higher for EU…