Federal Contractor Profile
Qorvo, INC.
$86M obligated·53 awards·3 agencies·12 NAICS
Federal Contracts
Showing award actions 51–79 of 79 funded award actions, most recent first.
- Contracts with positive obligations
- 53
- Funded award actions shown
- 79
- Obligations shown
- $86M
- Awarding agencies
- 3
This table shows award actions with a positive obligation. Zero-dollar and negative-dollar actions, such as administrative changes and deobligations, are not displayed. Multiple award actions may belong to the same contract.
Award data as of July 2, 2026. Source: USAspending federal award records.
| Date | Agency | PIID | NAICS | Description | Amount |
|---|---|---|---|---|---|
| Sep 26, 2017 | Department of DefenseNAVAL RESEARCH LABORATORY | N0017316C2016 | 541712 | IGF::OT::IGF PR57-1049-16 DESIGN, DEVELOP AND DELIVERY OF THREE FINAL DUAL BAND AMPLIFIERS WITHIN 24 MONTHS OF CONTRACT AWARD. | $101K |
| Aug 9, 2017 | Department of DefenseSPRMM1 DLA MECHANICSBURG | SPRMM117PHA34 | 335931 | AMPLIFIER,RADIO FRE | $68K |
| Aug 2, 2017 | Department of DefenseFA8650 USAF AFMC AFRL PZL AFRL/PZL | FA865017P1099 | 541712 | IGF::OT::IGF DUEL KA/Q-BAND LOW NOISE AMPLIFIERS | $149K |
| Aug 2, 2017 | Department of DefenseW6QK ACC-APG DURHAM | W911NF17C0033 | 541712 | IGF::OT::IGF RESEARCH BASE PERIOD (PHASE I)-- | $628K |
| Jun 9, 2017 | Department of DefenseNAVAL RESEARCH LABORATORY | N0017317P1503 | 811219 | IGF::OT::IGF AMPLIFIER REPAIR PR# 57-4062-17 | $20K |
| May 24, 2017 | National Aeronautics and Space AdministrationNASA SHARED SERVICES CENTER | NNX17CC84P | 541712 | IGF::OT::IGF NASA NEEDS EFFICIENT, LOW MASS, LOW VOLUME POWER ELECTRONICS FOR A WIDE VARIETY OF APPLICATIONS AND MISSIONS. SILICON CARBIDE (SIC) SWITCHES PROVIDE FAST, LOW LOSS SWITCHING, LOW ON-RESISTANCE AND HIGH BREAKDOWN VOLTAGE TO POTENTIALLY MEET THIS NEED. GATE DRIVERS ARE A KEY COMPONENT TO FULLY REALIZE THE SYSTEM LEVEL ADVANTAGES THAT SIC POWER SWITCHES CAN PROVIDE. BY IMPLEMENTING GATE DRIVERS IN SIC, THEY CAN TOLERATE EXTREME TEMPERATURES (500 DEG. C) ALLOWING THEM TO BE COLLOCATED WITH THE POWER SWITCHES THEY CONTROL. THIS REDUCES PARASITIC INDUCTANCE AND CIRCUIT AREA IMPROVING THE PERFORMANCE OF THE POWER SWITCH AND CONVERTER. THE SIC GATE DRIVER WILL HAVE DIRECT NEAR TERM APPLICATION IN POWER PROCESSING UNITS AND OTHER NASA POWER CONVERSION SYSTEMS AND ALSO BE SUITABLE FOR FUTURE EXPLORATION MISSIONS IN EXTREME ENVIRONMENTS. IN PHASE I, WE WILL DESIGN AND SIMULATE THE GATE DRIVER TO SHOW ITS FEASIBILITY. IN PHASE II, WE WILL FABRICATE THE GATE DRIVERS AND DEMONSTRATE THEM OPERATING AT HIGH TEMPERATURE IN A PRACTICAL CIRCUIT SUCH AS A HIGH VOLTAGE BOOST CONVERTER. WE WILL ALSO PERFORM RADIATION TESTING ON THE GATE DRIVER TO EVALUATE ITS RADIATION HARDNESS AS NEED FOR EXTENDED SPACE OPERATION. FOLLOWING PHASE II, WE WILL INTEGRATE THE GATE DRIVER WITH CO-PACKAGED SIC SWITCHES FOR NASA AND COMMERCIAL APPLICATIONS. ADDITIONALLY, THE ADVANCEMENT IN TRL DEMONSTRATED BY PHASE II TESTING WILL HELP ACCELERATE COMMERCIAL AVAILABILITY OF USCI'S SIC INTEGRATED CIRCUIT FABRICATION SERVICE. | $124K |
| May 22, 2017 | National Aeronautics and Space AdministrationNASA SHARED SERVICES CENTER | NNX17CP37P | 541712 | IGF::OT::IGF NASA IS SEEKING INNOVATIVE ADVANCED RF PLATFORM TECHNOLOGIES AT THE PHYSICAL LEVEL, SPECIFICALLY KA-BAND HIGH EFFICIENCY HIGH LINEARITY MICROWAVE 10 TO 20 WATT SOLID STATE POWER AMPLIFIERS (SSPAS), TO MEET THE NEEDS OF FUTURE SPACE MISSIONS UTILIZING COMPLEX MODULATION FOR COMMUNICATIONS AND SENSOR APPLICATIONS. SPACE MISSIONS REQUIRE THE SMALLEST SIZE, LOWEST POWER, SPACE QUALIFIABLE HARDWARE COMPONENTS LEADING TO THE CHOICE OF MONOLITHIC MICROWAVE INTEGRATED CIRCUIT (MMIC) TECHNOLOGY. IN PHASE I OF THIS SBIR, CUSTOM MMIC DESIGN SERVICES, INC. (CMDS) WILL ANALYZE THE GAN MMIC TECHNOLOGIES FROM THE AVAILABLE DOMESTIC FOUNDRIES (NGST, QORVO, HRL) AND SELECT BEST GAN HEMT FOUNDRY AND PROCESS TECHNOLOGY TO ACHIEVE KA-BAND HIGH EFFICIENCY HIGH LINEARITY MICROWAVE 10 TO 20 WATT SSPA. CMDS, UTILIZING THE APPROPRIATE CAD TOOLS, WILL THOROUGHLY DESIGN AND DEVELOP THE REQUIRED MMIC PA. WE WILL ALSO PREPARE ALL NECESSARY DESIGN RULE CHECK (DRC) AND LAYOUT VERSUS SCHEMATIC (LVS) DOCUMENTATION DURING PHASE I TO ASSURE CLEAN LAYOUTS READY FOR FABRICATION SUBMISSION TO FACILITATE THE FIRST PASS OF GAN MMIC FABRICATION ON THE FIRST DAY OF A FOLLOW-ON PHASE II CONTRACT. BY BEING COMPLETELY READY FOR SUBMISSION ON THE FIRST DAY OF PHASE II, WE ASSURE THE TIME NECESSARY FOR TWO COMPLETE GAAS MMIC LNA ITERATIONS DURING PHASE II. | $122K |
| Mar 27, 2017 | Department of DefenseW6QK ACC-APG DURHAM | W911NF17C0033 | 541712 | IGF::OT::IGF RESEARCH BASE PERIOD (PHASE I)-- | $249K |
| Mar 1, 2017 | Department of DefenseW6QK ACC-APG DURHAM | W911NF17C0029 | 541712 | IGF::OT::IGF RESEARCH BASE PERIOD (PHASE I)-- | $2.4M |
| Feb 16, 2017 | Department of DefenseNAVAL RESEARCH LABORATORY | N0017316C2016 | 541712 | IGF::OT::IGF PR57-1049-16 DESIGN, DEVELOP AND DELIVERY OF THREE FINAL DUAL BAND AMPLIFIERS WITHIN 24 MONTHS OF CONTRACT AWARD. | $853K |
| Jan 20, 2017 | Department of DefenseFA8650 USAF AFMC AFRL PZL AFRL/PZL | FA865011C7180 | 541712 | MICROSCALE POWER CONVERSION | $156K |
| Dec 2, 2016 | Department of DefenseSPRMM1 DLA MECHANICSBURG | SPRMM117PWB94 | 333999 | AMPLIFIER,RADIO FRE | $88K |
| Nov 1, 2016 | Department of DefenseNAVAIR WARFARE CTR AIRCRAFT DIV | N6833515C0060 | 541712 | RESEARCH AND DEVELOPMENT | $248K |
| Oct 31, 2016 | Department of DefenseNAVAL RESEARCH LABORATORY | N0017316C2016 | 541712 | IGF::OT::IGF PR57-1049-16 DESIGN, DEVELOP AND DELIVERY OF THREE FINAL DUAL BAND AMPLIFIERS WITHIN 24 MONTHS OF CONTRACT AWARD. | $170K |
| Sep 9, 2016 | Department of DefenseW6QK ACC-APG | W56KGU16C0071 | 515111 | IGF::OT::IGF SBIR PHASE 1 CONTRACT | $100K |
| Jul 12, 2016 | Department of DefenseFA8650 USAF AFMC AFRL PZL AFRL/PZL | FA865013C2349 | 541712 | IGF::OT::IGF SILICON CARBIDE VERTICAL JFET POWER ELECTRONICS FOR MEA | $3.6M |
| Jul 11, 2016 | Department of DefenseOFFICE OF NAVAL RESEARCH | N0001413C0071 | 541712 | W-BAND HPA USING ADVANCED GAN | $90K |
| Jul 8, 2016 | Department of DefenseOFFICE OF NAVAL RESEARCH | N0001416P2063 | 541712 | IGF::OT::IGF 6500V-100A SIC JFET-BASED HALF-BRIDGE MODULE (N161-066-0533) | $80K |
| Jun 30, 2016 | Department of DefenseFA8650 USAF AFMC AFRL PZL AFRL/PZL | FA865014C1719 | 541712 | IGF::OT::IGF SBIR III - ALQ-161 BAND 6 SOLID STATE TRANSMITTER LRU | $238K |
| May 23, 2016 | Department of DefenseNAVAL RESEARCH LABORATORY | N0017316C2016 | 541712 | IGF::OT::IGF PR57-1049-16 DESIGN, DEVELOP AND DELIVERY OF THREE FINAL DUAL BAND AMPLIFIERS WITHIN 24 MONTHS OF CONTRACT AWARD. | $1.8M |
| May 18, 2016 | Department of DefenseFA8650 USAF AFMC AFRL PZL AFRL/PZL | FA865014C1719 | 541712 | IGF::OT::IGF SBIR III - ALQ-161 BAND 6 SOLID STATE TRANSMITTER LRU | $100K |
| May 6, 2016 | National Aeronautics and Space AdministrationNASA SHARED SERVICES CENTER | NNX16CP16C | 541712 | IGF::OT::IGF RADIATION TOLERANT, EXTREME TEMPERATURE CAPABLE ELECTRONICS ARE NEEDED FOR A VARIETY OF PLANNED NASA MISSIONS. FOR EXAMPLE, INSITU EXPLORATION OF VENUS AND LONG DURATION EUROPA-JUPITER MISSIONS WILL EXPOSE ELECTRONICS TO TEMPERATURES UP TO 500 ?C AND RADIATION OF 3 MRAD (SI) TOTAL DOSE. DURING THIS PROGRAM, UNITED SILICON CARBIDE WILL EXTEND THE CAPABILITY OF ITS SIC JFET INTEGRATED CIRCUIT (IC) FABRICATION TECHNOLOGY TO PRODUCE ELECTRONICS COMPATIBLE WITH SUCH EXTREME ENVIRONMENTS. SILICON CARBIDE (SIC) JUNCTION FIELD EFFECT (JFET) BASED ELECTRONICS ARE IDEAL FOR THESE ENVIRONMENTS DUE TO THEIR RADIATION TOLERANCE AND THEIR HIGH PERFORMANCE AND RELIABILITY OVER AN EXTREMELY WIDE OPERATING TEMPERATURE RANGE. SIC ELECTRONICS CAN BE USED IN APPLICATIONS RANGING FROM LOW POWER, LOW NOISE MIXED SIGNAL ELECTRONICS FOR PRECISION ACTUATOR CONTROL, SENSOR INTERFACES, AND GUIDANCE AND NAVIGATION ELECTRONICS TO POWER ELECTRONICS FOR POWER MANAGEMENT AND DISTRIBUTION AND POWER PROCESSING UNITS. SIC BASED ELECTRONICS WILL HAVE LONGER STORAGE AND OPERATING LIFETIMES WHEN COMPARED TO EXISTING SILICON ELECTRONICS. USE OF SIC INTEGRATED CIRCUITS WILL ALSO LOWER SYSTEM MASS, VOLUME, AND POWER BY REDUCING OR ELIMINATING THE NEED FOR COOLING AND RADIATION SHIELDING. IN PHASE I, WE SHOWED THE FEASIBILITY OF OUR APPROACH BY MEASURING SIC JFET IC DEVICE CHARACTERISTICS AT 500 C; PERFORMING A 500 HOUR, 500 C RELIABILITY TEST; AND USING TCAD SIMULATIONS TO FURTHER EXPLORE THE DEVICES BEHAVIOR AT HIGH TEMPERATURE AND WHEN SUBJECTED TO RADIATION. IN PHASE II, WE WILL FULLY DEVELOP THE EXTREME ENVIRONMENT CAPABLE SIC IC FABRICATION TECHNOLOGY AND USE IT TO FABRICATE AN INTEGRATED CIRCUIT WHICH WILL BE CHARACTERIZED AT 500 C AND BEFORE AND AFTER RADIATION EXPOSURE. FOLLOWING PHASE II, WE WILL PROVIDE ACCESS TO THE PROCESS TECHNOLOGY AND RELATED DESIGN INTELLECTUAL PROPERTY THROUGH A COMMERCIAL FABRICATION SERVICE SO THAT NASA AND OTHERS CAN FULLY LEVERAGE ITS CAPABILITY. | $750K |
| Apr 22, 2016 | Department of DefenseOFFICE OF NAVAL RESEARCH | N0001413C0071 | 541712 | W-BAND HPA USING ADVANCED GAN | $350K |
| Feb 19, 2016 | Department of DefenseSPRMM1 DLA MECHANICSBURG | SPRMM116PYE83 | 335999 | RADIO FREQUENCY AMPLIFIER | $105K |
| Feb 2, 2016 | Department of DefenseFA8650 USAF AFMC AFRL PZL AFRL/PZL | FA865014C1719 | 541712 | IGF::OT::IGF SBIR III - ALQ-161 BAND 6 SOLID STATE TRANSMITTER LRU | $350K |
| Nov 13, 2015 | Department of DefenseFA8650 USAF AFMC AFRL PZL AFRL/PZL | FA865011C7180 | 541712 | MICROSCALE POWER CONVERSION | $161K |
| Nov 6, 2015 | Department of DefenseOFFICE OF NAVAL RESEARCH | N0001413C0071 | 541712 | W-BAND HPA USING ADVANCED GAN | $300K |
| Nov 3, 2015 | Department of DefenseFA8650 USAF AFMC AFRL PZL AFRL/PZL | FA865014C1719 | 541712 | IGF::OT::IGF SBIR III - ALQ-161 BAND 6 SOLID STATE TRANSMITTER LRU | $600K |
| Oct 20, 2015 | Department of DefenseSPRMM1 DLA MECHANICSBURG | SPRMM115CYA62 | 334412 | AMPLIFIER,RADIO FRE | $750 |
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